IXFM15N60
- Mfr.Part #
- IXFM15N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A TO204AE
- Stock
- 20,135
- In Stock :
- 20,135
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS :
- Non-Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- Round
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Form :
- PIN/PEG
- Drain Current-Max (Abs) (ID) :
- 15A
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 600V
- Pin Count :
- 2
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Power Dissipation-Max (Abs) :
- 300 W
- Package / Case :
- TO-204AE
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-204AE
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 7.5A, 10V
- Base Product Number :
- IXFM15
- Qualification Status :
- Not Qualified
- Power Dissipation Ambient-Max :
- 300 W
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-204AE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 300W Tc
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Number of Terminals :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.05Ohm
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Series :
- HiPerFET™
- FET Feature :
- --
- Datasheets
- IXFM15N60
N-Channel Tube 500m Ω @ 7.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-204AE
IXFM15N60 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFM15N60 Features
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
IXFM15N60 Applications
There are a lot of IXYS
IXFM15N60 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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