IXFM15N60
- Mfr.Part #
- IXFM15N60
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A TO204AE
- Stock
- 20,135
- In Stock :
- 20,135
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Base Product Number :
- IXFM15
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 2
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-204AE
- Package Shape :
- Round
- Manufacturer :
- IXYS Corporation
- JEDEC-95 Code :
- TO-204AE
- Terminal Form :
- PIN/PEG
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Number of Terminals :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 7.5A, 10V
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-204AE
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- RoHS :
- Non-Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 300 W
- Drain to Source Voltage (Vdss) :
- 600V
- Drain Current-Max (Abs) (ID) :
- 15A
- Power Dissipation Ambient-Max :
- 300 W
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- O-MBFM-P2
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 60A
- Mounting Type :
- Through Hole
- Series :
- HiPerFET™
- DS Breakdown Voltage-Min :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.05Ohm
- Product Status :
- Obsolete
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 300W (Tc)
- Datasheets
- IXFM15N60
N-Channel Tube 500m Ω @ 7.5A, 10V ±20V 4500pF @ 25V 170nC @ 10V 600V TO-204AE
IXFM15N60 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFM15N60 Features
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
IXFM15N60 Applications
There are a lot of IXYS
IXFM15N60 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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