IXFM10N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS Corporation

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

900V

Package :

Tube

Number of Terminals :

2

Drain-source On Resistance-Max :

1.1 Ω

Power Dissipation Ambient-Max :

300 W

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-204AA

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

Number of Elements :

1

Transistor Application :

SWITCHING

Package Shape :

Round

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Pbfree Code :

yes

DS Breakdown Voltage-Min :

900V

Polarity/Channel Type :

N-Channel

Package / Case :

TO-204AA, TO-3

Packaging :

Tube

Base Product Number :

IXFM10

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Supplier Device Package :

TO-204AA

FET Feature :

--

Product Status :

Obsolete

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pulsed Drain Current-Max (IDM) :

40A

Drain Current-Max (Abs) (ID) :

10A

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Terminal Form :

PIN/PEG

Reach Compliance Code :

Compliant

JESD-30 Code :

O-MBFM-P2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

300 W

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

RoHS Status :

ROHS3 Compliant