IXFM10N90
- Mfr.Part #
- IXFM10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO204AA
- Stock
- 30,157
- In Stock :
- 30,157
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- O-MBFM-P2
- Package Shape :
- Round
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- PIN/PEG
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-204AA
- FET Type :
- N-Channel
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 40A
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation Ambient-Max :
- 300 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Pin Count :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 10A
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-204AA
- Base Product Number :
- IXFM10
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™
- Drain-source On Resistance-Max :
- 1.1 Ω
- Number of Terminals :
- 2
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Package / Case :
- TO-204AA, TO-3
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Obsolete
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Drain to Source Voltage (Vdss) :
- 900V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 300 W
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFM10N90
N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-204AA, TO-3
IXFM10N90 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 10A.There is a peak drain current of 40A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 900V, it should remain above the 900V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFM10N90 Features
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFM10N90 Applications
There are a lot of IXYS
IXFM10N90 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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