IXFM11N80
- Mfr.Part #
- IXFM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 4,353
- In Stock :
- 4,353
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- PIN/PEG
- Terminal Position :
- BOTTOM
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- JEDEC-95 Code :
- TO-204
- Manufacturer :
- IXYS Corporation
- Number of Terminals :
- 2
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXFM11
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 11A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-204AA, TO-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Pin Count :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Series :
- HiPerFET™
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- Round
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 300 W
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation Ambient-Max :
- 300 W
- Drain to Source Voltage (Vdss) :
- 800V
- DS Breakdown Voltage-Min :
- 800V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 44A
- Surface Mount :
- No
- Supplier Device Package :
- TO-204AA
- JESD-30 Code :
- O-MBFM-P2
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.95Ohm
- Datasheets
- IXFM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 800V TO-204AA, TO-3
IXFM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXFM11N80 Applications
There are a lot of IXYS
IXFM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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