IXFM11N80
- Mfr.Part #
- IXFM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 4,353
- In Stock :
- 4,353
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 2
- JEDEC-95 Code :
- TO-204
- Drain Current-Max (Abs) (ID) :
- 11A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Base Product Number :
- IXFM11
- Terminal Form :
- PIN/PEG
- DS Breakdown Voltage-Min :
- 800V
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 800V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Supplier Device Package :
- TO-204AA
- Power Dissipation Ambient-Max :
- 300 W
- Number of Terminals :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Package Shape :
- Round
- Drain-source On Resistance-Max :
- 0.95Ohm
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Power Dissipation-Max :
- 300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 300 W
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- JESD-30 Code :
- O-MBFM-P2
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 44A
- Product Status :
- Obsolete
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-204AA, TO-3
- Datasheets
- IXFM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 800V TO-204AA, TO-3
IXFM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXFM11N80 Applications
There are a lot of IXYS
IXFM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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