IXFM11N80
- Mfr.Part #
- IXFM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 4,353
- In Stock :
- 4,353
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Power Dissipation (Max) :
- 300W (Tc)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Pin Count :
- 2
- Package Shape :
- Round
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.95Ohm
- Series :
- HiPerFET™
- Drain to Source Voltage (Vdss) :
- 800V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 44A
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Terminals :
- 2
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 800V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-204
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- PIN/PEG
- Manufacturer :
- IXYS Corporation
- FET Feature :
- --
- JESD-30 Code :
- O-MBFM-P2
- FET Type :
- N-Channel
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-204AA, TO-3
- Supplier Device Package :
- TO-204AA
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFM11
- Product Status :
- Obsolete
- Power Dissipation-Max (Abs) :
- 300 W
- Mounting Type :
- Through Hole
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 11A
- Case Connection :
- DRAIN
- Package :
- Tube
- Power Dissipation Ambient-Max :
- 300 W
- Datasheets
- IXFM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 800V TO-204AA, TO-3
IXFM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXFM11N80 Applications
There are a lot of IXYS
IXFM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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