IXFM11N80
- Mfr.Part #
- IXFM11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO204AA
- Stock
- 4,353
- In Stock :
- 4,353
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Pulsed Drain Current-Max (IDM) :
- 44A
- Package Shape :
- Round
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- Drain Current-Max (Abs) (ID) :
- 11A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- O-MBFM-P2
- Terminal Position :
- BOTTOM
- FET Feature :
- --
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-204
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 300W (Tc)
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-204AA, TO-3
- Drain-source On Resistance-Max :
- 0.95Ohm
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-204AA
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 800V
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Power Dissipation-Max (Abs) :
- 300 W
- Mounting Type :
- Through Hole
- Number of Terminals :
- 2
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Terminal Form :
- PIN/PEG
- Base Product Number :
- IXFM11
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 5.5A, 10V
- Power Dissipation Ambient-Max :
- 300 W
- Datasheets
- IXFM11N80
N-Channel Tube 950m Ω @ 5.5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 800V TO-204AA, TO-3
IXFM11N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Peak drain current is 44A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFM11N80 Features
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXFM11N80 Applications
There are a lot of IXYS
IXFM11N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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