IXFM35N30
- Mfr.Part #
- IXFM35N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 35A TO204AE
- Stock
- 47,382
- In Stock :
- 47,382
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation Ambient-Max :
- 300 W
- Package / Case :
- TO-204AE
- Terminal Form :
- PIN/PEG
- Series :
- HiPerFET™
- Terminal Position :
- BOTTOM
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-204AE
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- JESD-30 Code :
- O-MBFM-P2
- Power Dissipation-Max :
- 300W Tc
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 300 W
- Number of Terminations :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 35A
- DS Breakdown Voltage-Min :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 17.5A, 10V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 300W (Tc)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.1Ohm
- Package Shape :
- Round
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Packaging :
- Tube
- Supplier Device Package :
- TO-204AE
- Drain to Source Voltage (Vdss) :
- 300V
- Base Product Number :
- IXFM35
- Vgs (Max) :
- ±20V
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Published :
- 2000
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 140A
- Number of Terminals :
- 2
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IXFM35N30
N-Channel Tube 100m Ω @ 17.5A, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-204AE
IXFM35N30 Overview
A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 35A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 300V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFM35N30 Features
based on its rated peak drain current 140A.
a 300V drain to source voltage (Vdss)
IXFM35N30 Applications
There are a lot of IXYS
IXFM35N30 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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