IXFM35N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Series :

HiPerFET™

Drain-source On Resistance-Max :

0.1Ohm

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

PIN/PEG

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

140A

Package / Case :

TO-204AE

Reach Compliance Code :

Compliant

Number of Terminations :

2

JESD-30 Code :

O-MBFM-P2

Packaging :

Tube

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-204AE

Package Shape :

Round

Power Dissipation-Max :

300W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 4mA

Mounting Type :

Through Hole

Product Status :

Obsolete

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Vgs (Max) :

±20V

Number of Terminals :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Supplier Device Package :

TO-204AE

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

300V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation Ambient-Max :

300 W

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

300 W

Drain to Source Voltage (Vdss) :

300V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2000

Power Dissipation (Max) :

300W (Tc)

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

FET Feature :

--

Package :

Tube

Rds On (Max) @ Id, Vgs :

100m Ω @ 17.5A, 10V

Base Product Number :

IXFM35

RoHS Status :

ROHS3 Compliant

Pin Count :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

35A