IXFM35N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

100m Ω @ 17.5A, 10V

Drain to Source Voltage (Vdss) :

300V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

PIN/PEG

Vgs (Max) :

±20V

Package / Case :

TO-204AE

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Surface Mount :

No

Base Product Number :

IXFM35

JEDEC-95 Code :

TO-204AE

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.1Ohm

Mounting Type :

Through Hole

Power Dissipation Ambient-Max :

300 W

Pulsed Drain Current-Max (IDM) :

140A

Manufacturer :

IXYS Corporation

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

JESD-30 Code :

O-MBFM-P2

Number of Terminations :

2

Product Status :

Obsolete

Drain Current-Max (Abs) (ID) :

35A

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Published :

2000

Power Dissipation-Max :

300W Tc

Series :

HiPerFET™

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

300V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pin Count :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Terminals :

2

Power Dissipation-Max (Abs) :

300 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Package Shape :

Round

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 4mA

Supplier Device Package :

TO-204AE

Terminal Position :

BOTTOM

Case Connection :

DRAIN