IXDR35N60BD1
- Mfr.Part #
- IXDR35N60BD1
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- IGBT 600V 38A 125W ISOPLUS247
- Stock
- 33,376
- In Stock :
- 33,376
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- IGBT Type :
- NPT
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 35A
- Terminal Form :
- THROUGH-HOLE
- Input Type :
- Standard
- Power Dissipation :
- 125W
- Package :
- Tube
- Transistor Application :
- POWER CONTROL
- Test Condition :
- 300V, 35A, 10 Ω, 15V
- Collector Emitter Voltage (VCEO) :
- 600V
- Mount :
- Through Hole
- Additional Feature :
- High Speed
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Rise Time :
- 70ns
- Current - Collector Pulsed (Icm) :
- 48A
- Gate Charge :
- 140nC
- Factory Lead Time :
- 32 Weeks
- Series :
- --
- Supplier Device Package :
- ISOPLUS247™
- Turn Off Time-Nom (toff) :
- 390 ns
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 1.6mJ (on), 800μJ (off)
- Terminal Position :
- Single
- Current - Collector (Ic) (Max) :
- 38A
- Turn On Delay Time :
- 30 ns
- Base Product Number :
- IXDR35
- Manufacturer :
- IXYS Corporation
- Collector-Emitter Voltage-Max :
- 600 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity :
- NPN
- Td (on/off) @ 25°C :
- --
- Reverse Recovery Time (trr) :
- 40ns
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e1
- Power - Max :
- 125W
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Base Part Number :
- IXD*35N60
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 320 ns
- Pin Count :
- 3
- Number of Pins :
- 3
- Package Shape :
- RECTANGULAR
- Collector Current-Max (IC) :
- 38 A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Max Collector Current :
- 38A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 2.2V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time :
- 75 ns
- Case Connection :
- Isolated
- Published :
- 2006
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Package / Case :
- ISOPLUS247™
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 125W
- Reverse Recovery Time :
- 40ns
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXDR35N60BD1

IXDR35N60BD1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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