IXA45IF1200HB
- Mfr.Part #
- IXA45IF1200HB
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 78A 325W TO247
- Stock
- 7
- In Stock :
- 7
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247AD (HB)
- Minimum Operating Temperature :
- -40 °C
- Tradename :
- XPT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Channel Type :
- N
- Configuration :
- Single
- Number of Terminations :
- 3
- Published :
- 2001
- REACH SVHC :
- No SVHC
- Dimensions :
- 16.26 x 5.3 x 21.46mm
- Power Dissipation :
- 325W
- Turn Off Time-Nom (toff) :
- 350 ns
- Width :
- 5.3mm
- Operating Temperature :
- -40°C~150°C TJ
- Power - Max :
- 325W
- Current - Collector (Ic) (Max) :
- 78A
- JEDEC-95 Code :
- TO-247AD
- Reach Compliance Code :
- Compliant
- Length :
- 16.26mm
- Pbfree Code :
- yes
- RoHS :
- Details
- Brand :
- IXYS
- Product Category :
- IGBT Transistors
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge :
- 106nC
- Package Type :
- TO-247
- JESD-609 Code :
- e1
- Base Product Number :
- IXA45IF1200
- ECCN Code :
- EAR99
- Test Condition :
- 600V, 35A, 27 Ω, 15V
- Reverse Recovery Time :
- 350ns
- Factory Lead Time :
- 20 Weeks
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Td (on/off) @ 25°C :
- --
- Max Operating Temperature :
- 150 °C
- Reverse Recovery Time (trr) :
- 350ns
- IGBT Type :
- PT
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-247-3
- Min Operating Temperature :
- -55 °C
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 325W
- Height :
- 21.46mm
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 1.8V
- Series :
- --
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Product Type :
- IGBT Transistors
- Mounting Type :
- Through Hole
- Maximum Operating Temperature :
- +125 °C
- Gate-Emitter Voltage-Max :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Terminal Finish :
- TIN SILVER COPPER
- Technology :
- Si
- Packaging :
- Tube
- Switching Energy :
- 3.8mJ (on), 4.1mJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 35A
- Package :
- Tube
- Max Collector Current :
- 78A
- Turn On Time :
- 110 ns
- Input Type :
- Standard
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Datasheets
- IXA45IF1200HB
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IXA45IF1200HB datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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