IRLIZ34N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Terminal Position :

Single

Series :

HEXFET®

Case Connection :

Isolated

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.046Ohm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Pulsed Drain Current-Max (IDM) :

110A

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

37W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

35m Ω @ 12A, 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

55V

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

110 mJ

Transistor Element Material :

SILICON

Published :

1997

Vgs (Max) :

±16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Drain Current-Max (Abs) (ID) :

22A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole