IRG7U50HF12A
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- Mfr.Part #
- IRG7U50HF12A
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 34 Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 100A POWIR 34
- Stock
- 38,354
- In Stock ：
- 38,354
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Configuration :
- Half Bridge
- Max Power Dissipation :
- 310W
- Input :
- Standard
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Power - Max :
- 310W
- Current - Collector Cutoff (Max) :
- 1mA
- Published :
- 2014
- Collector Emitter Voltage (VCEO) :
- 2V
- Input Capacitance (Cies) @ Vce :
- 6nF @ 25V
- Package / Case :
- POWIR® 34 Module
- NTC Thermistor :
- No
- Mount :
- Chassis Mount
- Input Capacitance :
- 6nF
- Max Collector Current :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 50A
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRG7U50HF12A
IRG7U50HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG7U50HF12A Description
IRG7U50HF12A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7U50HF12A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG7U50HF12A Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7U50HF12A Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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