IRG7T300HF12B
- Mfr.Part #
- IRG7T300HF12B
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 62 Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 570A POWIR 62
- Stock
- 16,503
- In Stock :
- 16,503
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Current - Collector Cutoff (Max) :
- 4mA
- Configuration :
- Half Bridge
- Input Capacitance :
- 42.4nF
- Mount :
- Chassis Mount
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 300A
- Max Power Dissipation :
- 1.6kW
- Published :
- 2014
- Max Collector Current :
- 570A
- Operating Temperature :
- -40°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Package / Case :
- POWIR® 62 Module
- Power - Max :
- 1600W
- NTC Thermistor :
- No
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Input Capacitance (Cies) @ Vce :
- 42.4nF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Input :
- Standard
- Mounting Type :
- Chassis Mount
- Datasheets
- IRG7T300HF12B
IRG7T300HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG7T300HF12B Description
IRG7T300HF12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T300HF12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG7T300HF12B Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7T300HF12B Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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