IRG7T200HF12B

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Mfr.Part #
IRG7T200HF12B
Manufacturer
Infineon Technologies
Package / Case
POWIR® 62 Module
Datasheet
Download
Description
IGBT MOD 1200V 400A POWIR 62
Stock
8,964
In Stock :
8,964

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Collector Emitter Voltage (VCEO) :
2.2V
Operating Temperature :
-40°C~150°C TJ
Current - Collector Cutoff (Max) :
2mA
Published :
2014
Configuration :
Half Bridge
Mounting Type :
Chassis Mount
Package / Case :
POWIR® 62 Module
Collector Emitter Breakdown Voltage :
1.2kV
Max Collector Current :
400A
Input Capacitance :
22.4nF
Max Power Dissipation :
1.06kW
NTC Thermistor :
No
RoHS Status :
RoHS Compliant
Input :
Standard
Input Capacitance (Cies) @ Vce :
22.4nF @ 25V
Mount :
Chassis Mount
Power - Max :
1060W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Datasheets
IRG7T200HF12B
Introducing Transistors - IGBTs - Modules Infineon Technologies IRG7T200HF12B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Chassis Mount, Package / Case:POWIR® 62 Module, IRG7T200HF12B pinout, IRG7T200HF12B datasheet PDF, IRG7T200HF12B amp .Beyond Transistors - IGBTs - Modules Infineon Technologies IRG7T200HF12B ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG7T200HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

IRG7T200HF12B Description


IRG7T200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG7T200HF12B operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 400A. The IRG7T200HF12B has 3 pins and it is available in Module packaging way. IRG7T200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



IRG7T200HF12B Features


  • Input Capacitance (Cies) @ Vce: 22.4nF @ 25V

  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Collector Emitter Voltage (VCEO): 2.2V

  • Collector Emitter Breakdown Voltage: 1.2kV



IRG7T200HF12B Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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