IRG7T200CL12B
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- Mfr.Part #
- IRG7T200CL12B
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 62 Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 390A POWIR 62
- Stock
- 26,379
- In Stock ：
- 26,379
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Max Power Dissipation :
- 1.06kW
- Max Collector Current :
- 390A
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Input Capacitance (Cies) @ Vce :
- 22.5nF @ 25V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Mount :
- Chassis Mount
- Input Capacitance :
- 22.5nF
- Input :
- Standard
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Mounting Type :
- Chassis Mount
- Published :
- 2014
- Current - Collector Cutoff (Max) :
- 2mA
- NTC Thermistor :
- No
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1060W
- Operating Temperature :
- -40°C~150°C TJ
- Package / Case :
- POWIR® 62 Module
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 200A
- Datasheets
- IRG7T200CL12B
IRG7T200CL12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG7T200CL12B Description
IRG7T200CL12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T200CL12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG7T200CL12B Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG7T200CL12B Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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