IRG7PH35UD1MPBF

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Mfr.Part #
IRG7PH35UD1MPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRA-LOW VF DIODE FOR IN
Stock
23,401
In Stock :
23,401

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Gate Charge :
130nC
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Current - Collector (Ic) (Max) :
50A
Gate-Emitter Thr Voltage-Max :
6V
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 20A
Published :
2013
RoHS Status :
RoHS Compliant
IGBT Type :
Trench
Gate-Emitter Voltage-Max :
30V
Mounting Type :
Through Hole
Input Type :
Standard
Power - Max :
179W
Base Part Number :
IRG7PH35
Switching Energy :
620μJ (off)
Packaging :
Tube
Td (on/off) @ 25°C :
-/160ns
Fall Time-Max (tf) :
105ns
Power Dissipation-Max (Abs) :
179W
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector Pulsed (Icm) :
150A
Datasheets
IRG7PH35UD1MPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG7PH35UD1MPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Base Part Number:IRG7PH35, IRG7PH35UD1MPBF pinout, IRG7PH35UD1MPBF datasheet PDF, IRG7PH35UD1MPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG7PH35UD1MPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG7PH35UD1MPBF


IRG7PH35UD1MPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH35UD1MPBF               Description


 The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.


IRG7PH35UD1MPBF             Features


? Low VCE (ON) trench IGBT Technology

? Low Switching Losses

? Square RBSOA

? Ultra-Low VF Diode

? 1300Vpk Repetitive Transient Capacity

? 100% of the Parts Tested for ILM

? Positive VCE (ON) Temperature Co-Efficient

? Tight Parameter Distribution

? Lead Free Package

 


IRG7PH35UD1MPBF                         Applications


■ Industrial application on 24 V

■ Graphic cards

■ Embedded computer systems


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