IRG5W50HF06A
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- Mfr.Part #
- IRG5W50HF06A
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 34 Module
- Datasheet
- Download
- Description
- IGBT MOD 600V 75A 260W POWIR 34
- Stock
- 7,138
- In Stock ：
- 7,138
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Max Power Dissipation :
- 260W
- Collector Emitter Breakdown Voltage :
- 600V
- Input Capacitance (Cies) @ Vce :
- 2.6nF @ 25V
- NTC Thermistor :
- No
- Max Collector Current :
- 75A
- Published :
- 2014
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Input :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 50A
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 2.6nF
- Operating Temperature :
- -40°C~150°C TJ
- Mounting Type :
- Chassis Mount
- Current - Collector Cutoff (Max) :
- 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Half Bridge
- Power - Max :
- 260W
- Package / Case :
- POWIR® 34 Module
- Mount :
- Chassis Mount
- Datasheets
- IRG5W50HF06A
IRG5W50HF06A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG5W50HF06A Description
IRG5W50HF06A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG5W50HF06A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG5W50HF06A Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG5W50HF06A Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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