IRG5K200HF12B
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- Mfr.Part #
- IRG5K200HF12B
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 62 Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 400A POWIR 62
- Stock
- 10,182
- In Stock ：
- 10,182
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Input :
- Standard
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Operating Temperature :
- -40°C~150°C TJ
- Max Collector Current :
- 400A
- Current - Collector Cutoff (Max) :
- 2mA
- Configuration :
- Half Bridge
- Package / Case :
- POWIR® 62 Module
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Cies) @ Vce :
- 26nF @ 25V
- Power - Max :
- 1250W
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 26nF
- Collector Emitter Voltage (VCEO) :
- 2.6V
- Published :
- 2014
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 200A
- NTC Thermistor :
- No
- Max Power Dissipation :
- 1.25kW
- Mount :
- Chassis Mount
- Mounting Type :
- Chassis Mount
- Datasheets
- IRG5K200HF12B
IRG5K200HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG5K200HF12B Description
IRG5K200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG5K200HF12B operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The IRG5K200HF12B has 3 pins and it is available in Tube packaging way. IRG5K200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IRG5K200HF12B Features
-
Input Capacitance (Cies) @ Vce: 26nF @ 25V
-
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
-
Voltage - Collector Emitter Breakdown (Max): 1200V
-
Collector Emitter Voltage (VCEO): 2.6V
-
Collector Emitter Breakdown Voltage: 1.2kV
IRG5K200HF12B Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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