IRG5K75HF12A
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- Mfr.Part #
- IRG5K75HF12A
- Manufacturer
- Infineon Technologies
- Package / Case
- POWIR® 34 Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 150A POWIR 34
- Stock
- 9,869
- In Stock ：
- 9,869
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Input Capacitance (Cies) @ Vce :
- 9.5nF @ 25V
- Configuration :
- Half Bridge
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 75A
- Max Collector Current :
- 150A
- RoHS Status :
- RoHS Compliant
- NTC Thermistor :
- No
- Input Capacitance :
- 9.5nF
- Package / Case :
- POWIR® 34 Module
- Mount :
- Chassis Mount
- Input :
- Standard
- Mounting Type :
- Chassis Mount
- Power - Max :
- 540W
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Voltage (VCEO) :
- 2.6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Current - Collector Cutoff (Max) :
- 1mA
- Max Power Dissipation :
- 540W
- Published :
- 2014
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IRG5K75HF12A
IRG5K75HF12A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
IRG5K75HF12A Description
The IRG5K75HF12A is a 1200V 75A Fast IGBT Half-Bridge module packaged in POWIR 34 package. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die.
A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module. A certain electrical arrangement, such as a half-bridge, three levels, dual, chopper, booster, etc., is typically used to connect the dies.
IRG5K75HF12A Features
-
High power density.
-
Lower switching losses.
-
Lower conduction losses.
-
650V breakdown voltage.
-
No short circuit capability.
-
Housed in 12 mm low profile and low stray inductance packages.
IRG5K75HF12A Applications
-
Home appliances
-
Industrial motors
-
Automotive
-
Motor controllers
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