IRFZ34NSTRRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

FET Type :

N-Channel

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

29A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Drain-source On Resistance-Max :

0.04Ohm

Avalanche Energy Rating (Eas) :

130 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

100A

Power Dissipation-Max :

3.8W Ta 68W Tc

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Mounting Type :

Surface Mount

Number of Terminations :

2

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Transistor Application :

SWITCHING