IRFZ10PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

43W

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.7mm

Turn On Delay Time :

10 ns

Avalanche Energy Rating (Eas) :

47 mJ

Rds On (Max) @ Id, Vgs :

200m Ω @ 6A, 10V

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Height :

9.01mm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

19 ns

Published :

2011

Number of Channels :

1

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Power Dissipation-Max :

43W Tc

Factory Lead Time :

8 Weeks

Package / Case :

TO-220-3

Weight :

6.000006g

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Continuous Drain Current (ID) :

10A

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Length :

10.41mm

Number of Terminations :

3

Mount :

Through Hole

Rise Time :

50ns

Resistance :

200mOhm

Lead Free :

Lead Free

Turn-Off Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Radiation Hardening :

No