IRFZ14PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Weight :

6.000006g

Power Dissipation :

36W

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Packaging :

Tube

Transistor Application :

SWITCHING

Fall Time (Typ) :

19 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1

ECCN Code :

EAR99

Published :

2008

JEDEC-95 Code :

TO-220AB

Resistance :

200mOhm

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Current Rating :

10A

Continuous Drain Current (ID) :

10A

Height :

9.01mm

Threshold Voltage :

2V

Power Dissipation-Max :

43W Tc

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

10 ns

Recovery Time :

140 ns

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Turn-Off Delay Time :

13 ns

Pbfree Code :

yes

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

40A

Lead Free :

Lead Free

Number of Pins :

3

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

47 mJ

Length :

10.41mm

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

REACH SVHC :

Unknown

Width :

4.7mm

Number of Elements :

1

Nominal Vgs :

4 V

Number of Terminations :

3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

200m Ω @ 6A, 10V

Package / Case :

TO-220-3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Rise Time :

50ns

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN