IRFZ14SPBF
- Mfr.Part #
- IRFZ14SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A D2PAK
- Stock
- 1,347
- In Stock :
- 1,347
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 10A
- Number of Pins :
- 3
- Width :
- 9.65mm
- Operating Temperature :
- -55°C~175°C TJ
- Rds On Max :
- 200 mΩ
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Number of Channels :
- 1
- Rise Time :
- 50ns
- Length :
- 10.67mm
- FET Type :
- N-Channel
- Power Dissipation :
- 3.7W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Fall Time (Typ) :
- 19 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2015
- Supplier Device Package :
- D2PAK
- Packaging :
- Tube
- Turn On Delay Time :
- 10 ns
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 6A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Drain to Source Resistance :
- 200mOhm
- Input Capacitance :
- 300pF
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Element Configuration :
- Single
- Datasheets
- IRFZ14SPBF
N-Channel Tube 200mOhm @ 6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ14SPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 200mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFZ14SPBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFZ14SPBF Applications
There are a lot of Vishay Siliconix
IRFZ14SPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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