IRFRC20TRL
- Mfr.Part #
- IRFRC20TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A DPAK
- Stock
- 315,091
- In Stock :
- 315,091
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.2A, 10V
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Height :
- 2.39mm
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Supplier Device Package :
- D-Pak
- Length :
- 6.73mm
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Rds On Max :
- 4.4 Ω
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 600V
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance :
- 350pF
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 30 ns
- Published :
- 2016
- Fall Time (Typ) :
- 25 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Lead Free :
- Lead Free
- Weight :
- 1.437803g
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 23ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Drain to Source Resistance :
- 4.4Ohm
- Mount :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Width :
- 6.22mm
- Resistance :
- 4.4Ohm
- Datasheets
- IRFRC20TRL
N-Channel Tape & Reel (TR) 4.4Ohm @ 1.2A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20TRLPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 4.4Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFRC20TRLPBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)
IRFRC20TRLPBF Applications
There are a lot of Vishay Siliconix
IRFRC20TRLPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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