IRFRC20
- Mfr.Part #
- IRFRC20
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2A DPAK
- Stock
- 309,066
- In Stock :
- 309,066
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 4.4Ohm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.2A, 10V
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Fall Time (Typ) :
- 25 ns
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 2A
- Power Dissipation :
- 2.5W
- Published :
- 2017
- Number of Elements :
- 1
- Rise Time :
- 23ns
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 2
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 30 ns
- Supplier Device Package :
- D-Pak
- Input Capacitance :
- 350pF
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 4.4 Ω
- Datasheets
- IRFRC20
N-Channel Tube 4.4Ohm @ 1.2A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFRC20 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 4.4Ohm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFRC20 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)
IRFRC20 Applications
There are a lot of Vishay Siliconix
IRFRC20 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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