IRFR9N20DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Transistor Element Material :

SILICON

Resistance :

380mOhm

Voltage - Rated DC :

200V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Dual Supply Voltage :

200V

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

5.5 V

Length :

6.7056mm

Turn-Off Delay Time :

13 ns

Power Dissipation :

86W

Termination :

SMD/SMT

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Radiation Hardening :

No

Fall Time (Typ) :

9.3 ns

FET Type :

N-Channel

Series :

HEXFET®

Drain to Source Breakdown Voltage :

200V

Threshold Voltage :

5.5V

Turn On Delay Time :

7.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

JESD-30 Code :

R-PSSO-G2

Rise Time :

16ns

Power Dissipation-Max :

86W Tc

Packaging :

Tape and Reel (TR)

Width :

6.22mm

Current Rating :

9.4A

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

9.4A

Vgs (Max) :

±30V

ECCN Code :

EAR99

Element Configuration :

Single

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Height :

2.3876mm