IRFR9N20DTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

JEDEC-95 Code :

TO-252AA

Current Rating :

9.4A

Power Dissipation-Max :

86W Tc

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Terminal Position :

Single

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

100 mJ

Number of Terminations :

2

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.38Ohm

Series :

HEXFET®

Rise Time :

16ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Pulsed Drain Current-Max (IDM) :

38A

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2000

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9.4A

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc