IRFR9N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

100 mJ

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

38A

Series :

HEXFET®

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.38Ohm

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

200V

Published :

2000

Power Dissipation-Max :

86W Tc

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.6A, 10V

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

9.4A

JESD-609 Code :

e3