IRFR9210TRL
- Mfr.Part #
- IRFR9210TRL
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 1.9A DPAK
- Stock
- 1,442
- In Stock :
- 1,442
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 13 ns
- Mount :
- Surface Mount
- Width :
- 6.22mm
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 11 ns
- Drain to Source Resistance :
- 3Ohm
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Supplier Device Package :
- D-Pak
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 200V
- RoHS Status :
- Non-RoHS Compliant
- Rds On Max :
- 3 Ω
- Input Capacitance :
- 170pF
- Height :
- 2.39mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Tc
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Published :
- 2016
- Weight :
- 1.437803g
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 8.9nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- -200V
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 12ns
- Continuous Drain Current (ID) :
- 1.9A
- Datasheets
- IRFR9210TRL
P-Channel Tape & Reel (TR) 3Ohm @ 1.1A, 10V ±20V 170pF @ 25V 8.9nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 170pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR9210TRL Features
a continuous drain current (ID) of 1.9A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 3Ohm
a 200V drain to source voltage (Vdss)
IRFR9210TRL Applications
There are a lot of Vishay Siliconix
IRFR9210TRL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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