IRFR9210TR
- Mfr.Part #
- IRFR9210TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 1.9A DPAK
- Stock
- 2,149
- In Stock :
- 2,149
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.9nC @ 10V
- Resistance :
- 3Ohm
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Current Rating :
- -1.9A
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Drain to Source Resistance :
- 3Ohm
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 13 ns
- RoHS Status :
- Non-RoHS Compliant
- Rise Time :
- 12ns
- Continuous Drain Current (ID) :
- 1.9A
- Width :
- 6.22mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- Input Capacitance :
- 170pF
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Turn On Delay Time :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- -200V
- Power Dissipation :
- 2.5W
- Drain to Source Breakdown Voltage :
- -200V
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Published :
- 2017
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.1A, 10V
- Rds On Max :
- 3 Ω
- Supplier Device Package :
- D-Pak
- Turn-Off Delay Time :
- 11 ns
- Height :
- 2.39mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Weight :
- 1.437803g
- Datasheets
- IRFR9210TR
P-Channel Tape & Reel (TR) 3Ohm @ 1.1A, 10V ±20V 170pF @ 25V 8.9nC @ 10V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TR Overview
The maximum input capacitance of this device is 170pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.9A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFR9210TR Features
a continuous drain current (ID) of 1.9A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 3Ohm
a 200V drain to source voltage (Vdss)
IRFR9210TR Applications
There are a lot of Vishay Siliconix
IRFR9210TR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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