IRFR9120NTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

6.6A

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Drain-source On Resistance-Max :

0.48Ohm

Rds On (Max) @ Id, Vgs :

480m Ω @ 3.9A, 10V

Power Dissipation-Max :

40W Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

FET Type :

P-Channel

Transistor Application :

SWITCHING

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

100V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

100 mJ

Vgs (Max) :

±20V

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

26A

JESD-609 Code :

e3

Published :

2004

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63