IRFR9110TRPBF
- Mfr.Part #
- IRFR9110TRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 3.1A DPAK
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 1.2Ohm
- Drain to Source Voltage (Vdss) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance :
- 200pF
- Turn On Delay Time :
- 10 ns
- Threshold Voltage :
- -2V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Resistance :
- 1.2Ohm
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 1.9A, 10V
- Weight :
- 1.437803g
- Fall Time (Typ) :
- 17 ns
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Supplier Device Package :
- D-Pak
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 150°C
- Length :
- 6.73mm
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -100V
- Published :
- 2014
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- Rise Time :
- 27ns
- Number of Pins :
- 3
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 15 ns
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 2.5W
- Continuous Drain Current (ID) :
- 3.1A
- Mounting Type :
- Surface Mount
- Rds On Max :
- 1.2 Ω
- FET Type :
- P-Channel
- Height :
- 2.39mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRFR9110TRPBF
P-Channel Tape & Reel (TR) 1.2Ohm @ 1.9A, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9110TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 25V.This device conducts a continuous drain current (ID) of 3.1A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR9110TRPBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)
IRFR9110TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9110TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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