IRFR9110

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Packaging :

Tube

Drain to Source Resistance :

1.2Ohm

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Rise Time :

27ns

Fall Time (Typ) :

17 ns

FET Type :

P-Channel

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 1.9A, 10V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Max Operating Temperature :

150°C

Rds On Max :

1.2 Ω

Mount :

Surface Mount

Continuous Drain Current (ID) :

3.1A

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Published :

2016

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

D-Pak

Input Capacitance :

200pF

Power Dissipation-Max :

2.5W Ta 25W Tc

Mounting Type :

Surface Mount

Power Dissipation :

25W

Current Rating :

-3.1A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

-100V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Min Operating Temperature :

-55°C