IRFR9024NTRPBF
- Mfr.Part #
- IRFR9024NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 11A DPAK
- Stock
- 187,836
- In Stock :
- 187,836
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 23 ns
- Case Connection :
- DRAIN
- Threshold Voltage :
- -4V
- Dual Supply Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Fall Time (Typ) :
- 37 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 13 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 6.6A, 10V
- Height :
- 2.52mm
- Width :
- 6.22mm
- Power Dissipation-Max :
- 38W Tc
- Resistance :
- 175mOhm
- Element Configuration :
- Single
- Current Rating :
- -11A
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Published :
- 2004
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Voltage - Rated DC :
- -55V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.7056mm
- Avalanche Energy Rating (Eas) :
- 62 mJ
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Lead Free :
- Contains Lead, Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 55ns
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- -4 V
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- -55V
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- -11A
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 44A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 38W
- Recovery Time :
- 71 ns
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRFR9024NTRPBF

P-Channel Tape & Reel (TR) 175m Ω @ 6.6A, 10V ±20V 350pF @ 25V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024NTRPBF Description
Fifth-generation HEXFETs from lntemational Rectifier use advanced processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when combined with the HEXFET Power MOSFETs' high switching speed and ruggedized device design, is unrivaled. supplies the designer with a highly efficient and dependable tool that may be used in a range of situations. Surface mounting with vapor phase, infrared, or wave soldering processes is possible with the D-Pak. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFR9024NTRPBF Features
?Ultra LowOnResista nee nee nee nee nee nee ne
?P-Channel
?Surface Installation (IRFR9024N)
?Standard Lead (IRFU9024N)
?Adva need a Process Tech with no logical background.
?Quick Switching
?Avalanche-Resistant
?Lead-Free
IRFR9024NTRPBF Applications
Switching applications
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