IRFR9020TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

12 ns

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Width :

6.22mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9.9A

Drain to Source Breakdown Voltage :

-50V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

25 ns

Transistor Element Material :

SILICON

Published :

2011

Number of Channels :

1

Power Dissipation :

42W

FET Type :

P-Channel

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Length :

6.73mm

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Rise Time :

67ns

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Resistance :

280mOhm

Radiation Hardening :

No

Threshold Voltage :

-4V

Nominal Vgs :

-2 V

Element Configuration :

Single

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Lead Free :

Lead Free

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

280m Ω @ 5.7A, 10V

Drain to Source Voltage (Vdss) :

50V

Turn On Delay Time :

8.2 ns

Power Dissipation-Max :

42W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.437803g

Pulsed Drain Current-Max (IDM) :

40A

Height :

2.39mm

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

250 mJ