IRFR9010PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5.3A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.8A, 10V

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

50V

Height :

2.39mm

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

25W Tc

Published :

2014

Terminal Form :

Gull wing

Rise Time :

47ns

ECCN Code :

EAR99

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Elements :

1

Length :

6.73mm

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.5Ohm

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Packaging :

Tube

Radiation Hardening :

No

Mount :

Surface Mount

Turn On Delay Time :

6.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Pins :

3

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

-50V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

13 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Number of Channels :

1

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Pin Count :

3

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

35 ns

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

25W

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 10V