IRFR825TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

24A

Vgs (Max) :

±20V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

30 ns

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 3.7A, 10V

Lead Free :

Lead Free

Resistance :

1.3Ohm

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Fall Time (Typ) :

20 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Continuous Drain Current (ID) :

6A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Power Dissipation-Max :

119W Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Published :

2012

Radiation Hardening :

No

Rise Time :

25ns

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1346pF @ 25V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Power Dissipation :

119W

Terminal Form :

Gull wing

Turn On Delay Time :

8.5 ns

Vgs(th) (Max) @ Id :

5V @ 250μA