IRFR825PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Fall Time (Typ) :

20 ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1346pF @ 25V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

500V

Packaging :

Tube

Recovery Time :

138 ns

Turn On Delay Time :

8.5 ns

Power Dissipation-Max :

119W Tc

Height :

2.39mm

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

6.73mm

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation :

119W

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

6A

Rise Time :

25ns

Drain Current-Max (Abs) (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

30 ns

Number of Elements :

1

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 3.7A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

REACH SVHC :

No SVHC