IRFR812TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Fall Time (Typ) :

17 ns

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

78W

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Published :

2004

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Series :

HEXFET®

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Lead Free :

Lead Free

Terminal Position :

Single

Resistance :

2.2Ohm

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

3.6A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Turn On Delay Time :

14 ns

Vgs (Max) :

±20V

Number of Elements :

1

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 2.2A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

78W Tc

FET Type :

N-Channel