IRFR7440TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

140W Tc

Max Junction Temperature (Tj) :

175°C

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Nominal Vgs :

3 V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

180A

Power Dissipation :

140W

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4610pF @ 25V

Threshold Voltage :

3V

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 90A, 10V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Rise Time :

39ns

Number of Channels :

1

Drain-source On Resistance-Max :

0.0024Ohm

Published :

2004

Pulsed Drain Current-Max (IDM) :

760A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

51 ns

Factory Lead Time :

15 Weeks

Height :

2.52mm

Turn On Delay Time :

11 ns

Number of Terminations :

2

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

90A

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Fall Time (Typ) :

34 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

134nC @ 10V