IRFR7440PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4610pF @ 25V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2012

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Length :

6.73mm

Packaging :

Tube

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0024Ohm

Vgs (Max) :

±20V

Threshold Voltage :

3V

Mount :

Surface Mount

Continuous Drain Current (ID) :

90A

Turn-Off Delay Time :

51 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 90A, 10V

Recovery Time :

34 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

11 ns

Gate to Source Voltage (Vgs) :

20V

Rise Time :

39ns

FET Type :

N-Channel

Width :

6.22mm

Power Dissipation :

140W

ECCN Code :

EAR99

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

134nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Factory Lead Time :

20 Weeks

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

760A

Nominal Vgs :

3 V

Case Connection :

DRAIN

JESD-609 Code :

e3

Height :

2.39mm

Fall Time (Typ) :

34 ns

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Power Dissipation-Max :

140W Tc

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Terminal Form :

Gull wing