IRFR6215TRPBF
- Mfr.Part #
- IRFR6215TRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRFR6215 - 20V-250V P-CHANNEL PO
- Stock
- 92,922
- In Stock :
- 92,922
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Height :
- 2.52mm
- Lead Free :
- Contains Lead, Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Current Rating :
- -13A
- Drain to Source Voltage (Vdss) :
- 150V
- Length :
- 6.7056mm
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Turn On Delay Time :
- 14 ns
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 44A
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- -13A
- JEDEC-95 Code :
- TO-252AA
- Width :
- 6.22mm
- Radiation Hardening :
- No
- Rise Time :
- 36ns
- Drain to Source Breakdown Voltage :
- -150V
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- -150V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 53 ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- HEXFET®
- Threshold Voltage :
- -4V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 37 ns
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 110W Tc
- Recovery Time :
- 240 ns
- Power Dissipation :
- 110W
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 295m Ω @ 6.6A, 10V
- Factory Lead Time :
- 12 Weeks
- Resistance :
- 295mOhm
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Nominal Vgs :
- -4 V
- Max Junction Temperature (Tj) :
- 175°C
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Voltage - Rated DC :
- -150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 860pF @ 25V
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IRFR6215TRPBF

P-Channel Tape & Reel (TR) 295m Ω @ 6.6A, 10V ±20V 860pF @ 25V 66nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR6215TRPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area feasible. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer a highly efficient device that can be used in a wide range of applications.
Surface mounting via vapor phase, infrared, or wave soldering processes is possible with the D-PAK. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFR6215TRPBF Features
-
P-Channel
-
175°C Operating Temperature
-
Surface Mount (IRFR6215)
-
Straight Lead (IRFU6215)
-
Advanced Process Technology
-
Fast Switching
-
Fully Avalanche Rated
-
Lead-Free
IRFR6215TRPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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