IRFR6215TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

150V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

13A

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

110W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Surface Mount :

yes

DS Breakdown Voltage-Min :

150V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Terminal Form :

Gull wing

Number of Terminations :

2

Drain-source On Resistance-Max :

0.295Ohm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Published :

2004

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

44A

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

310 mJ

FET Type :

P-Channel