IRFR6215PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

310 mJ

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

150V

Qualification Status :

Not Qualified

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

110W Tc

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

13A

Drain-source On Resistance-Max :

0.295Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

150V

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

44A

Current - Continuous Drain (Id) @ 25°C :

13A Tc

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Factory Lead Time :

20 Weeks

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube