IRFR5505TRPBF

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Mfr.Part #
IRFR5505TRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 55V 18A DPAK
Stock
76,333
In Stock :
76,333

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Contact Plating :
Tin
Recovery Time :
77 ns
Drain to Source Voltage (Vdss) :
55V
Resistance :
110mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
110m Ω @ 9.6A, 10V
Length :
6.7056mm
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Lead Free :
Contains Lead, Lead Free
Power Dissipation :
57W
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Series :
HEXFET®
Number of Pins :
3
JEDEC-95 Code :
TO-252AA
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4V @ 250µA
Nominal Vgs :
-4 V
Width :
6.22mm
Continuous Drain Current (ID) :
-18A
Radiation Hardening :
No
Pulsed Drain Current-Max (IDM) :
64A
Power Dissipation-Max :
57W Tc
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Packaging :
Tape and Reel (TR)
Factory Lead Time :
12 Weeks
Current Rating :
-18A
Number of Terminations :
2
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
2.52mm
Max Junction Temperature (Tj) :
150°C
Case Connection :
DRAIN
FET Type :
P-Channel
Published :
1997
Voltage - Rated DC :
-55V
Fall Time (Typ) :
16 ns
Number of Channels :
1
Drain to Source Breakdown Voltage :
-55V
Threshold Voltage :
-4V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Time@Peak Reflow Temperature-Max (s) :
30
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Form :
Gull wing
Turn-Off Delay Time :
20 ns
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~150°C TJ
Rise Time :
28ns
REACH SVHC :
No SVHC
Number of Elements :
1
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Dual Supply Voltage :
-55V
Element Configuration :
Single
Vgs (Max) :
±20V
Termination :
SMD/SMT
Turn On Delay Time :
12 ns
Datasheets
IRFR5505TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR5505TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Number of Channels:1, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, IRFR5505TRPBF pinout, IRFR5505TRPBF datasheet PDF, IRFR5505TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR5505TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR5505TRPBF


P-Channel Tape & Reel (TR) 110m Ω @ 9.6A, 10V ±20V 650pF @ 25V 32nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR5505TRPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -55V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 64A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR5505TRPBF Features


a continuous drain current (ID) of -18A
a drain-to-source breakdown voltage of -55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 64A.
a threshold voltage of -4V
a 55V drain to source voltage (Vdss)


IRFR5505TRPBF Applications


There are a lot of Infineon Technologies
IRFR5505TRPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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