IRFR5505

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

18A

Pulsed Drain Current-Max (IDM) :

64A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

TIN LEAD

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

150 mJ

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Power Dissipation-Max :

57W Tc

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

110m Ω @ 9.6A, 10V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.11Ohm

Terminal Position :

Single

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel