IRFR5410TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

52A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

66W Tc

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

13A

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

13A Tc

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.205Ohm

DS Breakdown Voltage-Min :

100V

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

FET Type :

P-Channel

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Number of Elements :

1

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Published :

1999

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

194 mJ

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V