IRFR5410TRPBF

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Mfr.Part #
IRFR5410TRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 100V 13A DPAK
Stock
13,310
In Stock :
13,310

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
52A
Drain to Source Voltage (Vdss) :
100V
Recovery Time :
190 ns
Case Connection :
DRAIN
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
-100V
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Contact Plating :
Tin
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
12 Weeks
Continuous Drain Current (ID) :
-13A
Fall Time (Typ) :
46 ns
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead, Lead Free
Time@Peak Reflow Temperature-Max (s) :
30
Nominal Vgs :
-4 V
Power Dissipation :
66W
Vgs (Max) :
±20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Length :
6.7056mm
Radiation Hardening :
No
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4V @ 250µA
Max Junction Temperature (Tj) :
150°C
Width :
6.22mm
Dual Supply Voltage :
-100V
Rise Time :
58ns
Published :
1999
Voltage - Rated DC :
-100V
REACH SVHC :
No SVHC
Additional Feature :
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Mounting Type :
Surface Mount
Height :
2.52mm
Operating Mode :
ENHANCEMENT MODE
Series :
HEXFET®
Threshold Voltage :
-4V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
205m Ω @ 7.8A, 10V
Number of Elements :
1
FET Type :
P-Channel
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
260
Turn-Off Delay Time :
45 ns
JEDEC-95 Code :
TO-252AA
Power Dissipation-Max :
66W Tc
Mount :
Surface Mount
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Current Rating :
-13A
Element Configuration :
Single
JESD-609 Code :
e3
Number of Channels :
1
Resistance :
205mOhm
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Turn On Delay Time :
15 ns
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 25V
Datasheets
IRFR5410TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR5410TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, IRFR5410TRPBF pinout, IRFR5410TRPBF datasheet PDF, IRFR5410TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR5410TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR5410TRPBF


P-Channel Tape & Reel (TR) 205m Ω @ 7.8A, 10V ±20V 760pF @ 25V 58nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR5410TRPBF Description


International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to deliver incredibly low on-resista nee per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The D-Pak is made to be surface mounted using wave soldering, vapor phase, or infrared technologies. For through-hole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.



IRFR5410TRPBF Features


?Extremely Low On-Resistant


?P-ChannelX


Mount Surface (IRFR5410)


Direct Lead (IRFU5410)


Process technology, advanced


? Quick Switching


?Fully Rated for Avalanches


?Lead-Free



IRFR5410TRPBF Applications


Switching applications


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