IRFR5410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

66W Tc

ECCN Code :

EAR99

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

52A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Drain-source On Resistance-Max :

0.205Ohm

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

13A

Published :

1999

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

9 Weeks

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

DS Breakdown Voltage-Min :

100V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

194 mJ

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE