IRFR540ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Power Dissipation :

91W

FET Type :

N-Channel

Max Operating Temperature :

175°C

Turn On Delay Time :

14 ns

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

35A Tc

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

91W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Vgs (Max) :

±20V

Rds On Max :

28.5 mΩ

Input Capacitance :

1.69nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

28.5mOhm @ 21A, 10V

Element Configuration :

Single

Fall Time (Typ) :

34 ns

Width :

6.22mm

Length :

6.7056mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

35A

Series :

HEXFET®

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Supplier Device Package :

D-Pak

Height :

2.26mm

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 50μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

42ns

Turn-Off Delay Time :

43 ns

Drain to Source Resistance :

28.5MOhm

Mounting Type :

Surface Mount

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Radiation Hardening :

No