IRFR540ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Published :

2004

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

91W Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

28.5m Ω @ 21A, 10V

Turn On Delay Time :

14 ns

Rise Time :

42ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

35A

Length :

6.7056mm

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Width :

6.22mm

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

34 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 50μA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Number of Elements :

1

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.26mm

Number of Terminations :

2

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.0285Ohm

Turn-Off Delay Time :

43 ns

Power Dissipation :

91W