IRFR5305TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

FET Type :

P-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

10.3886mm

Drain to Source Breakdown Voltage :

-55V

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

-31A

Drain-source On Resistance-Max :

0.065Ohm

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Voltage - Rated DC :

-55V

Lead Free :

Lead Free

Published :

2004

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

110W Tc

Mount :

Surface Mount

Turn-Off Delay Time :

39 ns

Rise Time :

66ns

Number of Elements :

1

Terminal Position :

Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Height :

2.3876mm

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Series :

HEXFET®

Fall Time (Typ) :

63 ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Current Rating :

-31A

Avalanche Energy Rating (Eas) :

280 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.73mm

Case Connection :

DRAIN

Number of Terminations :

2

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

110W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Radiation Hardening :

No