IRFR5305TRPBF
- Mfr.Part #
- IRFR5305TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 31A DPAK
- Stock
- 473,434
- In Stock :
- 473,434
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Nominal Vgs :
- -4 V
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Mounting Type :
- Surface Mount
- Recovery Time :
- 110 ns
- ECCN Code :
- EAR99
- Max Junction Temperature (Tj) :
- 175°C
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Power Dissipation :
- 110W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 39 ns
- Drain to Source Breakdown Voltage :
- -55V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Current Rating :
- -31A
- Series :
- HEXFET®
- Termination :
- SMD/SMT
- Dual Supply Voltage :
- -55V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 2.39mm
- Width :
- 6.22mm
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Published :
- 2000
- Fall Time (Typ) :
- 63 ns
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Threshold Voltage :
- -4V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- -55V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise Time :
- 66ns
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Lead Free :
- Contains Lead, Lead Free
- Mount :
- Surface Mount
- Resistance :
- 65mOhm
- Length :
- 6.73mm
- Max Dual Supply Voltage :
- 55V
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 110W Tc
- JEDEC-95 Code :
- TO-252AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- -31A
- Datasheets
- IRFR5305TRPBF

P-Channel Tape & Reel (TR) 65m Ω @ 16A, 10V ±20V 1200pF @ 25V 63nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5305TRPBF Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for use in a variety of applications. D-Pak is designed for surface mounting using gas phase, infrared or wave soldering techniques. The direct guide version (IRFU series) is suitable for through-hole installation applications. In a typical surface mount application, the power consumption can be up to 1.5 watts.
IRFR5305TRPBF Features
Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFR5305TRPBF Applications
through-hole installation applications
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