IRFR5305TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Pulsed Drain Current-Max (IDM) :

110A

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

280 mJ

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation-Max :

110W Tc

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

31A

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.065Ohm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2000

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant